Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-22
2007-05-22
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S595000
Reexamination Certificate
active
10876477
ABSTRACT:
A transistor and a method for manufacturing the same are disclosed. One cell transistor having silicon-insulator-silicon (“SIS”) structure and two cell transistors having silicon-oxide-nitride-oxide-silicon (“SONOS”) structure constitute the transistor of the present invention which can store 2 bits. The cell transistor having SIS structure and the cell transistors having SONOS structure share one common gate electrode so that the transistor of the present invention requires only one voltage generation and control circuit.
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Tomoko Ogura et al., “Embedded Twin MONOS Flash Memories with 4ns and 15ns Fast Access Times”, Symposium on VLSI Circuits Digest of Technical Papers, 2003, pp. 207-210.
Ahn Jin Hong
Kim Yil Wook
Lee Sang Don
Park Young Jun
Darrow Justin T.
Heller Ehrman LLP
Hynix Semiconductor Inc
Kumar Johnny A.
Wilczewski M.
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