Transistor and method for manufacturing same

Details Transistor and method for manufacturing same Transistor and method for manufacturing same

2011-01-11

2011-01-11

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S135000, C257SE21382

Reexamination Certificate

active

07867857

ABSTRACT:
An improved coupling stability between the source region and the source electrode of the transistor is achieved. In the method for manufacturing the MOSFET, the p-type base region is formed in a semiconductor layer, and after the p-type base region is formed in the surface portion of the n+ type source region, the higher concentration source region extending from the side edge of the n+ type source region to the lateral side of the n+ type source region is formed in the surface portion of the p-type base region. Then, the source electrode coupled to the higher concentration source region is formed. This allows providing an improved coupling stability between the source electrode and the source region when a misalignment is occurred in the location for forming the source electrode during the formation of the source electrode to be coupled to the first source region.

REFERENCES:
patent: 6174773 (2001-01-01), Fujishima
patent: 5-335582 (1993-12-01), None

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