Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With heat sink embedded in encapsulant
Reexamination Certificate
2006-12-05
2006-12-05
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With heat sink embedded in encapsulant
C257S706000, C257S707000
Reexamination Certificate
active
07145254
ABSTRACT:
A semiconductor device includes a semiconductor chip that generates heat in operation, a pair of heat sinks for cooling the chip, and a mold resin, in which the chip and the heat sinks are embedded. The thickness t1of the chip and the thickness t2of one of heat sinks that is joined to the chip using a solder satisfy the equation of t2/t1≧5. Furthermore, the thermal expansion coefficient α1of the heat sinks and the thermal expansion coefficient α2of the mold resin satisfy the equation of 0.5≦α2/α1≦1.5. In addition, the surface of the chip that faces the solder has a roughness Ra that satisfies the equation of Ra≦500 nm. Moreover, the solder is a Sn-based solder to suppress relaxation of a compressive stress in the chip, which is caused by the creeping of the solder.
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Fukuda Yutaka
Hirano Naohiko
Mamitsu Kuniaki
Nakase Yoshimi
Nomura Kazuhito
Denso Corporation
Jr. Carl Whitehead
Mitchell James M.
Posz Law Group , PLC
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