Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2005-07-26
2005-07-26
Zarneke, David (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S415000, C257S482000, C257S682000, C257S680000
Reexamination Certificate
active
06921952
ABSTRACT:
A torsion spring for a MEMS structure has a plurality of beams, each beam having two ends wherein both ends are fixed to a predetermined area, and at least one connection bar disposed at a right angle to a lengthwise direction of the plurality of beams, wherein the at least one connection bar connects the plurality of beams. Preferably, the distance between the connection bars is equal to or greater than the width of one of the plurality of beams. Accordingly, a torsion spring according to the present invention has a bending stiffness greater than a torsional stiffness, which allows easier torsion. Further, a torsion spring according to the present invention may be easily fabricated by etching.
REFERENCES:
patent: 5862003 (1999-01-01), Saif et al.
patent: 6541831 (2003-04-01), Lee et al.
patent: 6668628 (2003-12-01), Hantschel et al.
Muller, “Microgimbal Torsion Beam Design Using Open, Thin-Walled . . . ” J.MEMS, 10(4):550-560, Dec. 2001.
Anya Igwe U.
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
Zarneke David
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