Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-10-03
2006-10-03
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S772000, C438S777000, C438S785000, C438S786000
Reexamination Certificate
active
07115530
ABSTRACT:
A system and method for manufacturing semiconductor devices with dielectric layers having a dielectric constant greater than silicon dioxide includes depositing a dielectric layer on a substrate and subjecting the dielectric layer to a plasma to reduce top surface roughness in the dielectric layer.
REFERENCES:
patent: 6391802 (2002-05-01), Delpech et al.
patent: 2004/0127003 (2004-07-01), Chambers
patent: WO 2004021409 (2004-03-01), None
Chambers James J.
Colombo Luigi
Quevedo-Lopez Manuel A.
Visokay Mark R.
Brady III W. James
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Thomas Toniae M.
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