Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-07-05
2011-07-05
Phung, Anh (Department: 2824)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S078000, C257S288000, C257S410000, C257SE21535, C257SE29296, C438S151000, C438S285000, C438S287000, C977S773000, C977S824000, C977S892000, C977S936000
Reexamination Certificate
active
07972931
ABSTRACT:
The present invention relates to a method of manufacturing thin-film transistors using nanoparticles and thin film transistors manufactured by the method. A hydrophilic buffer layers are deposited on the substrates to facilitate formation of nanoparticle films. Sintered nanoparticles are used as an active layer and dielectric materials of high dielectric coefficient are also used as a gate dielectric layer to form a top gate electrode on the gate dielectric layer, thereby enabling low-voltage operation and low-temperature fabrication.
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Cho Kyoung-Ah
Jang Jae-Won
Kim Dong-won
Kim Sangsig
Korea University Industrial & Academic Collaboration Founda
Locke Lord Bissell & Liddell LLP
Lulis Michael
Phung Anh
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