Top electrode in a strongly oxidizing environment

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S307000, C257S308000, C257S309000, C257S310000, C438S201000, C438S211000, C438S257000

Reexamination Certificate

active

07023043

ABSTRACT:
An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.

REFERENCES:
patent: 5191510 (1993-03-01), Huffman
patent: 6103567 (2000-08-01), Shih et al.
patent: 6211035 (2001-04-01), Moise et al.
patent: 6297085 (2001-10-01), Aoki et al.
patent: 6309894 (2001-10-01), Miki et al.
patent: 0 557 937 (1993-09-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Top electrode in a strongly oxidizing environment does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Top electrode in a strongly oxidizing environment, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Top electrode in a strongly oxidizing environment will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3581442

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.