Top ARC polymers, method of preparation thereof and top ARC...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

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Details

C430S326000, C430S273100, C430S330000, C430S327000, C526S318420

Reexamination Certificate

active

07147994

ABSTRACT:
Disclosed herein are a top anti-reflective coating polymer used in a photolithography process, a method for preparing the anti-reflective coating polymer, and an anti-reflective coating composition comprising the anti-reflective coating polymer. The disclosed top anti-reflective coating polymer is used in immersion lithography for the fabrication of a sub-50 nm semiconductor device. The top anti-reflective coating polymer is represented by Formula 1 below:wherein R1, R2 and R3 are independently hydrogen or a methyl group; and a, b and c represent the mole fraction of each monomer, and are in the range between 0.05 and 0.9. The top anti-reflective coating formed using the anti-reflective coating polymer is not soluble in water and can be applied to immersion lithography using water as a medium for a light source. Since the disclosed top anti-reflective coating can reduce the reflectance from an underlayer, the uniformity of CD is improved, thus enabling the formation of an ultrafine pattern.

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