Titanium nitride barrier layers

Details Titanium nitride barrier layers Titanium nitride barrier layers

1996-02-26

1999-04-20

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438656, 438685, 438663, 438660, H01L 21443

Patent

active

058952667

ABSTRACT:
Improved titanium nitride barrier layers are formed by depositing a first titanium layer; treating this layer with an oxygen plasma to form an oxygen-containing titanium layer thereover; depositing a titanium nitride layer over the oxygen-containing titanium layer; and treating the titanium nitride layer with an oxygen-containing plasma. Robust titanium nitride barrier layers are formed that can prevent spiking by an overlying aluminum contact layer even after heat treatment up to 550.degree. C.

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patent: 5750439 (1998-05-01), Naito
Brett et al, "High rate planar magnetron deposition of transparent, conducting and heat reflecting films on glass and plastic", J.Vac.Sci. Technol.A1(2), Apr.-Jun. 1983, pp. 352-355.
Dixit et al, "Reactively sputtered titanium nitride films for submicron contact barrier metallization", Appl. Phys. Lett. 62(4) 25 Jan. 1993, pp. 357-359.

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