TiSi.sub.2 /TiN clad interconnect technology

Details TiSi.sub.2 /TiN clad interconnect technology TiSi.sub.2 /TiN clad interconnect technology

1995-06-07

1997-08-05

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257768, 257915, H01L 2976, H01L 2348, H01L 2912

Patent

active

056545754

ABSTRACT:
A TiSi.sub.2 /TiN clad LI strap process and structure are disclosed which combine the advantages of both TiSi.sub.2 and TiN LI processes. According to the invention, the retention of a thin TiN layer between the local interconnect and contacts provides a diffusion barrier against counterdoping and relaxes the thermal budget for subsequent processing.

REFERENCES:
patent: 4746219 (1988-05-01), Holloway et al.

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