Tinoxide thin film, preparation thereof, and gas detecting senso

Details Tinoxide thin film, preparation thereof, and gas detecting senso Tinoxide thin film, preparation thereof, and gas detecting senso

1996-02-14

1999-11-23

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438609, 427529, 427561, 427564, C23C 1432

Patent

active

059899905

ABSTRACT:
The present invention relates to tinoxide thin film, a process for manufacturing thereof comprising the step of depositing tin while providing oxygen or ionized oxygen around a substrate, and relates to a gas detecting sensor prepared by the use of such tinoxide thin film.

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patent: 5616061 (1997-04-01), Potter
Yamada, Isao and Gikan Takaoka, "Ionized Cluster beams: Physics and Technology", Jpn J. Appl. Phys., vol. 32 (1993) pp. 2121, May 1993.
H. Takaoka et al. Crystallographic Properties of Tin Oxide Thin Films Prepared by R-ICB Technique, pp. 143-146, Dept. of Electronics, Kyoto University.

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