Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-08-31
2009-06-30
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23021, C257SE23146, C257SE23020, C257S737000, C257S778000, C257S738000, C257S734000, C257S784000
Reexamination Certificate
active
07554201
ABSTRACT:
Example embodiments of the present invention relate to an alloy solder and a semiconductor device using the alloy solder. Other example embodiments relate to an alloy solder capable of increasing reliability of a junction between a semiconductor chip and a substrate. According to still In still other example embodiments of the present invention, there may be a tin-bismuth (Sn—Bi) family alloy solder between a semiconductor chip and a substrate, and a semiconductor device using the alloy solder. The semiconductor device may include a semiconductor chip formed with a plurality of gold bumps, a substrate having metal wirings connected to the gold bumps, and a junction including a tin-bismuth family alloy solder interposed between and connecting the gold bump and the metal wiring.
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Kang Uu-Byung
Kwon Yong-Hwan
Lee Chung-Sun
Lee Jong-Ho
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Williams Alexander O
LandOfFree
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