Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2005-04-05
2005-04-05
Siek, Vuthe (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000
Reexamination Certificate
active
06877142
ABSTRACT:
The present invention relates to a method and apparatus for determining capacitances and charge models for MOS devices to be used in calculating delays in a timing verifier for a circuit. The models are generated by first creating a variety of configurations of MOS devices which vary the inputs to the source, drain, and gate. Such inputs may include rising and falling values as well as constant values at VDD and VSS. Simulations are run on all of the configurations using conditions anticipated for the circuit to be analyzed. Capacitance values obtained from the simulations are used to determine models based upon length and width of the MOS devices using standard curve fitting techniques. Models then can be used for determining delays within the circuit.
REFERENCES:
patent: 4924430 (1990-05-01), Zasio et al.
patent: 5452225 (1995-09-01), Hammer
patent: 5548526 (1996-08-01), Misheloff
patent: 5559715 (1996-09-01), Misheloff
patent: 5748489 (1998-05-01), Beatty et al.
patent: 6473888 (2002-10-01), Nassif et al.
Badeau Roy
Desai Madhav
Fair, III Harry Ray
Farrell James Arthur
Nassif Nevine
Hewlett--Packard Development Company, L.P.
Siek Vuthe
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