Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-04-12
2011-04-12
Pert, Evan (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE23141, C257SE21495
Reexamination Certificate
active
07923369
ABSTRACT:
In one embodiment, a method of forming a via includes forming an first opening in the semiconductor substrate, wherein the first opening has a bottom and sidewalls, forming a sacrificial fill in the first opening, forming a dielectric layer over the sacrificial fill, forming a second opening in the dielectric layer, wherein the second opening is over the sacrificial fill, removing the sacrificial fill from the first opening after forming the second opening, and forming a conductive material in the first opening and second opening.
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Chiu Joanna G.
Freescale Semiconductor Inc.
Pert Evan
Reames Matthew
Vo Kim-Marie
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