Through substrate via including variable sidewall profile

Details Through substrate via including variable sidewall profile Through substrate via including variable sidewall profile

2011-01-04

2011-01-04

Luu, Chuong A. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C257SE23011

Reexamination Certificate

active

07863180

ABSTRACT:
A microelectronic structure, such as a semiconductor structure, and a method for fabricating the microelectronic structure, include an aperture within a substrate. Into the aperture is located and formed a via. The via may include a through substrate via. The aperture includes, progressing sequentially contiguously at least partially through the substrate: (1) a first comparatively wide region at a surface of the substrate; (2) a constricted region contiguous with the first comparatively wide region; (3) a second comparatively wide region contiguous with the constricted region; and (4) a tapered region contiguous with the second comparatively wide region. The structure of the aperture provides for ease in filling the aperture, as well as void isolation within the via that is filled into the aperture.

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