Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2011-03-01
2011-03-01
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S774000, C257S773000, C257SE23011
Reexamination Certificate
active
07898063
ABSTRACT:
A through substrate via includes an annular conductor layer at a periphery of a through substrate aperture, and a plug layer surrounded by the annular conductor layer. A method for fabricating the through substrate via includes forming a blind aperture within a substrate and successively forming and subsequently planarizing within the blind aperture a conformal conductor layer that does not fill the aperture and plug layer that does fill the aperture. The backside of the substrate may then be planarized to expose at least the planarized conformal conductor layer.
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International Search Report, PCT/US2009/033723, Apr. 3, 2009.
Lindgren Peter James
Sprogis Edmund Juris
Stamper Anthony Kendall
Stein Kenneth Jay
International Business Machines - Corporation
Kotulak, Esq. Richard M.
Lee Eugene
Scully , Scott, Murphy & Presser, P.C.
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