Through-silicon via with air gap

Details Through-silicon via with air gap Through-silicon via with air gap

2011-03-22

2011-03-22

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S667000, C257SE21573, C257SE21597

Reexamination Certificate

active

07910473

ABSTRACT:
A semiconductor substrate having a through-silicon via with an air gap interposed between the through-silicon via and the semiconductor substrate is provided. An opening is formed partially through the semiconductor substrate. The opening is first lined with a liner and then the opening is filled with a conductive material. A backside of the semiconductor substrate is thinned to expose the liner, which is subsequently removed to form an air gap around the conductive material of the through-silicon via. A dielectric layer is formed of the backside of the semiconductor substrate to seal the air gap.

REFERENCES:
patent: 2001/0028105 (2001-10-01), Hashimoto et al.
patent: 2007/0069327 (2007-03-01), Tegen et al.
patent: 2007/0222054 (2007-09-01), Hembree
patent: 2009/0243047 (2009-10-01), Wolter et al.
patent: 2010/0167534 (2010-07-01), Iwata
patent: 2010/0176494 (2010-07-01), Chen

Affiliated with

Also associated with

Rating

Through-silicon via with air gap does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Through-silicon via with air gap, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Through-silicon via with air gap will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2738611