Through silicon via lithographic alignment and registration

Details Through silicon via lithographic alignment and registration Through silicon via lithographic alignment and registration

2010-01-20

2011-10-18

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S462000, C430S314000, C257SE21240

Reexamination Certificate

active

08039356

ABSTRACT:
A method of manufacturing an integrated circuit structure forms a first opening in a substrate and lines the first opening with a protective liner. The method deposits a material into the first opening and forms a protective material over the substrate. The protective material includes a process control mark and includes a second opening above, and aligned with, the first opening. The method removes the material from the first opening through the second opening in the protective material. The process control mark comprises a recess within the protective material that extends only partially through the protective material, such that portions of the substrate below the process control mark are not affected by the process of removing the material.

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