Through hole vias at saw streets including protrusions or...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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C257SE23011, C438S107000

Reexamination Certificate

active

08072079

ABSTRACT:
A semiconductor package includes a semiconductor die having a contact pad formed over a top surface of the semiconductor die. The semiconductor die may include an optical device. In one embodiment, a second semiconductor die is deposited over the semiconductor die. The package includes an insulating material deposited around a portion of the semiconductor die. In one embodiment, the insulating material includes an organic material. A first through hole via (THV) is formed in the insulating material using a conductive material. The first THV may form a protrusion extending beyond a bottom surface of the semiconductor die opposite the top surface and be connected to a first semiconductor device. A redistribution layer (RDL) may be deposited over the semiconductor die. The RDL forms an electrical connection between the contact pad of the semiconductor die and the first THV.

REFERENCES:
patent: 6693361 (2004-02-01), Siniaguine et al.
patent: 6727116 (2004-04-01), Poo et al.
patent: 2005/0230804 (2005-10-01), Tanida et al.
patent: 2006/0220256 (2006-10-01), Shim et al.
patent: 2007/0216006 (2007-09-01), Park et al.

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