Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2006-09-29
2010-02-23
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
Reexamination Certificate
active
07666768
ABSTRACT:
A method, apparatus and various material-architectures in an electrically conductive through die via formed of a composite material with a continuous phase of matrix metal and a dispersed phase of graphitic structures of carbon, wherein bulk material properties of the composite material differ from similar bulk material properties of the matrix metal.
REFERENCES:
patent: 2003/0130114 (2003-07-01), Hampden-Smith et al.
patent: 2007/0045780 (2007-03-01), Akram et al.
Arana Leonel
Matayabas, Jr. James C.
Raravikar Nachiket R.
Suh Daewoong
Garber Charles D
Intel Corporation
Nelson Kenneth A.
Stevenson Andre′ C
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