Through-die metal vias with a dispersed phase of graphitic...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor

Reexamination Certificate

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Reexamination Certificate

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07666768

ABSTRACT:
A method, apparatus and various material-architectures in an electrically conductive through die via formed of a composite material with a continuous phase of matrix metal and a dispersed phase of graphitic structures of carbon, wherein bulk material properties of the composite material differ from similar bulk material properties of the matrix metal.

REFERENCES:
patent: 2003/0130114 (2003-07-01), Hampden-Smith et al.
patent: 2007/0045780 (2007-03-01), Akram et al.

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