Three inch silicon carbide wafer with low warp, bow, and TTV

Details Three inch silicon carbide wafer with low warp, bow, and TTV Three inch silicon carbide wafer with low warp, bow, and TTV

2005-04-07

2008-09-09

Nguyen, Dao H (Department: 2818)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

C117S201000, C117S205000, C257S049000, C257S066000, C257SE21320, C257SE21321, C257SE21221, C428S064100, C428S698000

Reexamination Certificate

active

07422634

ABSTRACT:
A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches, a warp of less than about 5 μm, a bow less than about 5 μm, and a total thickness variation of less than about 2.0 μm.

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