Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-04-08
2011-12-27
Bryant, Kiesha (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29300
Reexamination Certificate
active
08084805
ABSTRACT:
A vertical NAND flash memory device includes a substrate having a face and a string of serially connected flash memory cells on the substrate. A first flash memory cell is adjacent the face, and a last flash memory cell is remote from the face. The flash memory cells include repeating layer patterns that are stacked on the face, and a pillar that extends through the series of repeating layer patterns. The pillar includes at least one oblique wall. At least two of the series of repeating layer patterns in the string are of different thicknesses. Other vertical microelectronic devices and related fabrication methods are also described.
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Hur Sung-Hoi
Kim Jin-Ho
Shim Sun-Il
Yi Su-Youn
Bryant Kiesha
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
Wright Tucker
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