Three-dimensional integrated circuits with protection layers

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip

Reexamination Certificate

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Details

C257SE23010, C257SE23023, C257SE23145, C438S108000, C438S109000, C438S456000

Reexamination Certificate

active

07812459

ABSTRACT:
A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.

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