Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-09-23
2008-09-23
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21410, C438S156000
Reexamination Certificate
active
11181561
ABSTRACT:
A method for manufacturing a three-dimensional high voltage transistor is disclosed. According to the method, lengths and widths of channels are increased while the reducing transistor forming area on plane, and semiconductor devices are completely separated from each other while restraining parasitic capacitance, latch-up phenomena, and formation of field transistors. The three-dimensional high voltage transistor includes an active area of the three-dimensional high voltage transistor formed in the form of a column on predetermined areas of a Silicon-On-Insulator substrate, source and drain formed in the active areas of the three-dimensional high voltage transistor in the depth direction, a channel area formed between the source and the drain in the depth direction, and a column-shaped gate formed at the side of the channel area on the Silicon-On-Insulator substrate.
REFERENCES:
patent: 6329240 (2001-12-01), Hsu et al.
patent: 6417540 (2002-07-01), Sugihara et al.
patent: 2006/0228840 (2006-10-01), Chau et al.
patent: 2007/0262384 (2007-11-01), Sato
Kim Lee Young
Park Sung Kun
Booth Richard A.
Magnachip Semiconductor Ltd.
Marshall & Gerstein & Borun LLP
LandOfFree
Three-dimensional high voltage transistor and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Three-dimensional high voltage transistor and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Three-dimensional high voltage transistor and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3928773