Thin silicon wafer with high gettering ability and...

Details Thin silicon wafer with high gettering ability and... Thin silicon wafer with high gettering ability and...

2011-06-14

2011-06-14

Pham, Hoai v (Department: 2892)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S692000, C438S758000

Reexamination Certificate

active

07960253

ABSTRACT:
In a silicon wafer having an oxygen precipitate layer, a depth of DZ layer ranging from a wafer surface to an oxygen precipitate layer is 2 to 10 μm and an oxygen precipitate concentration of the oxygen precipitate layer is not less than 5×107precipitates/cm3.

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Korean Office Action of Feb. 7, 2011 for Korean Patent Application No. 10-2009-0039209. (with English translation).

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