Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2009-06-19
2011-11-22
Sofocleous, Alexander (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C257S421000, C365S171000, C365S173000, C428S811100, C438S003000
Reexamination Certificate
active
08064244
ABSTRACT:
A spin valve structure for a spintronic device is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)xmultilayer. The (Co/Ni)xmultilayer is deposited by a low power and high Ar pressure process to avoid damaging Co/Ni interfaces and thereby preserving PMA. As a result, only a thin seed layer is required. PMA is maintained even after annealing at 220° C. for 10 hours. Examples of GMR and TMR spin valves are described and may be incorporated in spin transfer oscillators and spin transfer MRAMs. The free layer is preferably made of a FeCo alloy including at least one of Al, Ge, Si, Ga, B, C, Se, Sn, or a Heusler alloy, or a half Heusler alloy to provide high spin polarization and a low magnetic damping coefficient.
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Koui Katsuhiko
Li Min
Oikawa Soichi
Yamada Ken'ichiro
Zhang Kunliang
Ackerman Stephen B.
Kabushiki Kaisha Toshiba
Saile Ackerman LLC
Sofocleous Alexander
TDK Corporation
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