Thin resist with transition metal hard mask for via etch applica

Details Thin resist with transition metal hard mask for via etch applica Thin resist with transition metal hard mask for via etch applica

1998-12-01

2000-12-19

Huff, Mark F.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430316, 430317, 430318, G03C 500

Patent

active

061625876

ABSTRACT:
A method of forming a via structure is provided. In the method, a dielectric layer is formed on an anti-reflective coating (ARC) layer covering a first metal layer; and a transition metal layer is formed on the dielectric layer. An ultra-thin photoresist layer is formed on the transition metal layer, and the ultra-thin photoresist layer is patterned with short wavelength radiation to define a pattern for a via. The patterned ultra-thin photoresist layer is used as a mask during a first etch step to transfer the via pattern to the transition metal layer. The first etch step includes an etch chemistry that is selective to the transition metal layer over the ultra-thin photoresist layer and the dielectric layer. The transition metal layer is employed as a hard mask during a second etch step to form a contact hole corresponding to the via pattern by etching portions of the dielectric layer.

REFERENCES:
patent: 4299911 (1981-11-01), Ochi et al.
patent: 5040020 (1991-08-01), Rauschenbach et al.
patent: 5534312 (1996-07-01), Hill et al.
patent: 5757077 (1998-05-01), Chung et al.
patent: 5786262 (1998-07-01), Jang et al.
patent: 5817567 (1998-10-01), Jang et al.
patent: 5976769 (1999-11-01), Chapman
patent: 5985766 (1999-11-01), Wu et al.
patent: 5989776 (1999-11-01), Felter

Affiliated with

Also associated with

Rating

Thin resist with transition metal hard mask for via etch applica does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin resist with transition metal hard mask for via etch applica, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin resist with transition metal hard mask for via etch applica will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-269910