Thin interface layer to improve copper etch stop

Details Thin interface layer to improve copper etch stop Thin interface layer to improve copper etch stop

2005-04-26

2005-04-26

Chambliss, Alonzo (Department: 2814)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Including adhesive bonding step

C438S740000, C216S035000

Reexamination Certificate

active

06884659

ABSTRACT:
In accordance with the objectives of the invention a new method is provided for improving adhesion strength that is deposited over the surface of a layer of copper. Conventional etch stop layers of for instance dichlorosilane (SiCl2H2) or SiOC have poor adhesion with an underlying layer of copper due to poor molecular binding between the interfacing layers. The surface of the deposited layer of copper can be provided with a special enhanced interface layer by using a method provided by the invention. That is pre-heat of the copper layer followed by a pre-cleaning treatment with ammonia (NH3) and N2, followed by forming an adhesive enhanced layer over the copper layer by treatment with N2or O2or N2with alkyl-silane or alkyl silane.

REFERENCES:
patent: 5946601 (1999-08-01), Wong et al.
patent: 6100587 (2000-08-01), Merchant et al.
patent: 6136680 (2000-10-01), Lai et al.
patent: 6623654 (2003-09-01), Chen et al.
patent: 6656532 (2003-12-01), Forester

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