Thin gate electrode CMOS devices and methods of fabricating...

Details Thin gate electrode CMOS devices and methods of fabricating... Thin gate electrode CMOS devices and methods of fabricating...

2011-03-15

2011-03-15

Le, Thao X (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S377000, C257SE21632, C257SE29255

Reexamination Certificate

active

07906390

ABSTRACT:
A CMOS device and method of forming the CMOS device. The device including a source and a drain formed in a semiconductor substrate, the source and the drain and separated by a channel region of the substrate; a gate dielectric formed on a top surface of the substrate and a very thin metal or metal alloy gate electrode formed on a top surface of the gate dielectric layer, a polysilicon line abutting and in electrical contact with the gate electrode, the polysilicon line thicker than the gate electrode. The method including, forming the gate electrode by forming a trench above the channel region and depositing metal into the trench.

REFERENCES:
patent: 2002/0076885 (2002-06-01), Chen
patent: 2003/0143810 (2003-07-01), Kuroi et al.
patent: 2004/0137688 (2004-07-01), Chang et al.
patent: 2005/0051854 (2005-03-01), Cabral et al.
patent: 2007/0190728 (2007-08-01), Sreekantham et al.
patent: 2008/0157212 (2008-07-01), Lavoie et al.
patent: 2008/0265322 (2008-10-01), Lin et al.

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