Thin gate dielectric for a CMOS transistor and method of...

Details Thin gate dielectric for a CMOS transistor and method of... Thin gate dielectric for a CMOS transistor and method of...

2005-02-01

2005-02-01

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S458000, C438S770000

Reexamination Certificate

active

06849512

ABSTRACT:
A method of making a thin gate dielectric includes implanting a barrier substance into a region of a silicon substrate. A capacitance-increasing material is implanted into the silicon substrate. An outside layer of the silicon substrate is oxidized to form a first silicon oxide layer. The silicon substrate is oxidized between the first silicon oxide layer and the region.

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