Thin film voltage-tuned semiconductor bulk acoustic resonator (S

Details Thin film voltage-tuned semiconductor bulk acoustic resonator (S Thin film voltage-tuned semiconductor bulk acoustic resonator (S

1993-12-13

1995-08-29

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

310320, 310321, 310324, H01L 2982, H01L 4104, H01L 4108, H01L 4118

Patent

active

054463068

ABSTRACT:
Disclosed is a thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR). A piezoelectric film is positioned between a first electrode and a second electrode and positioned adjacent a semiconductor substrate containing a via hole. A variable voltage source applies a DC bias voltage to the electrodes which causes an electric field to be created between the electrodes within the piezoelectric film. The resulting electric field causes the piezoelectric film to resonate at a frequency different than its unbiased resonant frequency. By adjusting the variable voltage source to change the DC bias voltage, the resonant frequency from the thin film semiconductor bulk acoustic resonator (SBAR) can be varied.

REFERENCES:
patent: 5233259 (1993-08-01), Kishnaswamy et al.
Stokes, R. B. and Crawford J. D., X-Band Thin Film Acoustic Filters on GaAs, IEEE MTT Symposium, May 1992, TRW Electonic Systems Group, One Space Park, Redondo Beach, Calif. 90278.
Kline, G. R., Ketcham, R. S. and Lakin, K. M., Thin Film Microwave Acoustic Filters on GaAs, GaAs IC Symposium, IEEE 1988, pp. 313-316.
Hruska, Carl K., The Electroelastic Tensor and Other Second-Order Phenomena in Quasilinear Interpretation of the Polarizing Effect with Thickness Vibrations of .alpha.-Quartz Plates, Processing of the 31st Annual Symposium on Frequency Control, Jun. 1-3, 1977, pp. 159-170.

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