Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-05-03
2011-05-03
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S150000, C438S680000, C257SE51005, C257SE29151
Reexamination Certificate
active
07935578
ABSTRACT:
The present invention relates to a TFT, a TFT array panel, and a method of manufacturing the TFT array panel. A method of manufacturing the TFT array panel includes the steps of forming a first electrode and a second electrode that are separated from each other on a substrate, forming a silicon layer including amorphous silicon and polycrystalline silicon on the substrate, forming a semiconductor by patterning the silicon layer, forming a gate insulating layer on the semiconductor, forming a third electrode that is opposite to the semiconductor on the gate insulating layer, forming a passivation layer on the third electrode, and forming a pixel electrode on the passivation layer. The TFT array panel has high mobility because the TFT include polycrystalline silicon at the channel region of the TFT.
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Choi Beohm-Rock
Choi Joon-hoo
Goh Joon-Chul
Cantor & Colburn LLP
Estrada Michelle
Samsung Electronics Co,. Ltd.
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