Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-07-27
2011-11-22
Potter, Roy K (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C257SE29151
Reexamination Certificate
active
08062937
ABSTRACT:
A thin-film transistor (TFT) substrate includes a gate electrode, a gate insulation pattern, a channel pattern, a first organic insulation pattern, a source electrode and a drain electrode. The gate electrode is formed on a base substrate. The gate insulation pattern is formed on the gate electrode and is smaller than the gate electrode. The channel pattern is formed on the gate insulation pattern and the channel pattern is smaller than the gate electrode. The first organic insulation pattern is formed on the base substrate to cover the channel pattern, the gate insulation pattern and the gate electrode.
REFERENCES:
patent: 5311041 (1994-05-01), Tominaga et al.
patent: 5981973 (1999-11-01), Matsuzaki et al.
patent: 6274884 (2001-08-01), Lee et al.
patent: 07-120789 (1995-05-01), None
Innovation Counsel LLP
Potter Roy K
Samsung Electronics Co,. Ltd.
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