Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-06-14
2011-06-14
Ho, Tu-Tu V (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S159000, C257S059000, C257S066000, C257S401000, C257SE29291, C257SE29294, C257SE21414, C349S043000, C349S044000
Reexamination Certificate
active
07960221
ABSTRACT:
A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.
REFERENCES:
patent: 2006/0086937 (2006-04-01), Fujii et al.
Kim Yong Jo
Lee Hong Woo
Lee Jong Hwan
Lee Yong Woo
Lim Do Gi
F. Chau & Associates LLC
Ho Tu-Tu V
Samsung Electronics Co,. Ltd.
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