Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-06-14
2011-06-14
Hoang, Quoc D (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21372
Reexamination Certificate
active
07960219
ABSTRACT:
A thin-film transistor (“TFT”) substrate includes an insulating substrate, a gate line and a data line which are insulated from each other, disposed on the insulating substrate and are arranged in a lattice, and a pixel electrode which is electrically connected to the gate line and the data line by a switching device. The data line includes a lower layer which is formed of a transparent electrode, and an upper layer which is disposed directly on the lower layer.
REFERENCES:
patent: 7133102 (2006-11-01), Choi et al.
Jeong Ki-Hun
Kim In-Woo
Kim Woong-Kwon
Cantor & Colburn LLP
Hoang Quoc D
Samsung Electronics Co,. Ltd.
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