Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2009-04-24
2011-10-25
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE29151, C349S043000
Reexamination Certificate
active
08044405
ABSTRACT:
A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer.
REFERENCES:
patent: 2008/0042133 (2008-02-01), Chin et al.
patent: 2005-222732 (2005-08-01), None
patent: 10-1997-0030393 (1997-06-01), None
patent: 10-1999-0015670 (1999-03-01), None
patent: 10-1999-0048962 (1999-07-01), None
patent: 10-2001-0008892 (2001-02-01), None
patent: 10-2001-0011858 (2001-02-01), None
patent: 10-2001-0053873 (2001-07-01), None
patent: 10-2003-0042282 (2003-05-01), None
patent: 10-2006-0069173 (2006-06-01), None
patent: 10-2006-0072409 (2006-06-01), None
patent: 10-2006-0134470 (2006-12-01), None
Bang Jung-Suk
Chin Hong-Kee
Choi Seung-Ha
Choi Shin-Il
Choi Yong-Mo
Cantor & Colburn LLP
Dickey Thomas L
Erdem Fazli
Samsung Electronics Co,. Ltd.
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