Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2009-02-26
2010-10-26
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S057000, C257S072000
Reexamination Certificate
active
07821003
ABSTRACT:
Provided are a thin-film transistor (TFT) substrate and a display device having the same. In the TFT substrate and the display device having the same, first and second drain electrodes of first and second TFTs connected to first and second pixel electrodes, respectively, are vertically bent a plurality of times. The distance between each of the first and second source electrodes and the first or second drain electrode is maintained at a minimum interline gap to increase the distance between a data line and each of the first and second drain electrodes and minimize the length of a region of each of the first and second drain electrodes adjacent to the data line. Consequently, a coupling capacitance between the data line and each of the first and second drain electrodes can be reduced, and each unit pixel region can have a uniform parasite capacitance within a predetermined range. In addition, the luminance deviation of a display device, which performs inversion driving, can be reduced.
REFERENCES:
patent: 2009/0102773 (2009-04-01), Um et al.
Ahn Soon-Il
Kwon Ho-Kyoon
Kwon Ji-Hyun
Lee Won-Hee
Na Byoung-Sun
Innovation Counsel LLP
Pham Long
Samsung Electronics Co,. Ltd.
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