Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-11
2008-12-30
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000, C438S149000
Reexamination Certificate
active
07470950
ABSTRACT:
A TFT substrate with reduced pixel defect rate is presented. The TFT substrate includes a pixel electrode, a negative line to apply a reverse voltage to the pixel electrode, and a recovery transistor including a drain electrode overlapping a part of the negative line with a insulating layer disposed between the negative line and the drain electrode. A contact hole is formed on the negative line and the drain electrode, and a bridge electrode connects the negative line and the drain electrode through the contact hole.The thin film transistor substrate and a display apparatus presented herein protect a data line assembly metal layer and decrease pixel defect. An improved reverse voltage efficiency is applied to a pixel electrode to protect a drain electrode.
REFERENCES:
patent: 7218048 (2007-05-01), Choi et al.
patent: 7295466 (2007-11-01), Lambrache et al.
patent: 2005/0218794 (2005-10-01), Seo et al.
patent: 2004-047963 (2004-02-01), None
patent: 2003-075921 (2003-09-01), None
patent: 2004-062068 (2004-07-01), None
Choi Beohm-rock
Chung Jin-koo
Hong Song-Mi
Lee Dong-won
Rhee Jung-soo
Dang Phuc T
MacPherson Kwok & Chen & Heid LLP
Samsung Electronics Co,. Ltd.
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