Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-02-28
2009-02-03
Garber, Charles D. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21415, C257SE21593, C257SE27111, C257SE29151, C438S149000, C438S685000
Reexamination Certificate
active
07485927
ABSTRACT:
Disclosed are a thin film transistor substrate of an LCD device and a method of manufacturing the same. The thin film transistor substrate includes a nickel-silicide layer formed on an insulating layer pattern including silicon and a metal layer formed on the nickel-silicide layer. Nickel is coated on the insulating layer pattern including silicon and a metal material is coated on the nickel-coated layer. After that, a heat treatment is performed at about 200 to about 350° C. to obtain the nickel-silicide layer. Since the thin film transistor substrate of the LCD device is manufactured by applying the nickel-silicide wiring, a device having low resistivity and good ohmic contact property can be obtained.
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Jai II Ryu, et al., “High Performance a-Si TFT with ITO
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Cho Beom-Seok
Choe Hee-Hwan
Jeong Chang-Oh
F. Chau & Associates LLC
Garber Charles D.
Isaac Stanetta D
Samsung Electronics Co,. Ltd.
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