Thin-film transistor polycrystalline film formation by nickel in

Details Thin-film transistor polycrystalline film formation by nickel in Thin-film transistor polycrystalline film formation by nickel in

1997-06-20

2000-05-23

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438149, 438166, 438487, H01L 2120

Patent

active

060665475

ABSTRACT:
A method for annealing amorphous silicon film to produce polycrystalline film suitable for thin-film transistors fabricated on glass substrates is provided. The method involves using nickel to help induce the crystallization. The method also uses a high temperature, for a short period of time, to anneal the amorphous silicon. A one-step annealing process implants nickel ions, having a dosage of approximately 1.times.10.sup.15 ions/cm.sup.2, into the silicon before annealing. A two-step annealing process is also provided in which a thin nickel film is put in close proximity to the amorphous silicon film. A first, low temperature, anneal converts a portion of the films to nickel silicide. A second, high temperature, anneal uses the silicide to induce the amorphous film to crystallize. A TFT polycrystalline film made by the above mentioned process of using nickel and, either a one, or two-step high temperature annealing to induce crystallization is also provided.

REFERENCES:
patent: 5147826 (1992-09-01), Liu et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5773329 (1998-06-01), Kuo
S. R. Wilsin, W. M. Paulson, R. B. Gregory, "Rapid Thermal Annealing for Future VLSI", Solid State Technology, p. 185, Jun. 1985.
Stanely Wolf and Richanrd N. Tauber, Silicon Processing for the VLSI Era, vol. 1, pp. 57-58, 1986.
S. M. Sze, VLSI Technology, second edition, pp. 355-362, 1988.
C. Hayzelden and J. L. Batstone "Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films", J. Appl. Phys. 74 (12) p. 8279, Jun. 15, 1993.
Kawazu, Japanese Journal of Applied Physics:vol. 29 No. 12 Dec. 1990 pp.: 2698-2704 "Low-Temperature Crystallization of Hydrogenated Amorphos Silicon Induced by Nickel Silicide Formation".
Kawazu, Japanese journal of Applied Physics:vol. 29 No. 4 Apr. 1990 pp.: 729-738 "Intial Stage of the Interfacial Reaction between Nickel and Hydrogenated Amorphous Silicon".
Hayzelden, Journal of Applied Physics: 73 (12), Jun. 15, 1993 pp.: 8279-8289 "Silicide Formation and Silicide-Mediated Crystallization of Nickel Implanted Amorphous Silicon Thin Films".
Kuo, The Electrochemical Society Proceedings; vol. 94-35 pp. 116-122 "Thin Film Transistor Technologies", Apr. 1995.
Liu, Applied Physics Letters 55 (7) Aug. 14, 1989 pp.: 660-662 "Selective area crystallization of amorphous silicon films by low-temperature rapid thermal annealing".
Cuane, Applied Surface Science 36 (Jan. 1989) pp.: 597-604 "Combined CW Laser and /Furnace annealing of Amorphous Si and Ge in Contact With Some Metals".
Article entitled, "Low Temperature Poly-Si Thin-Film Transistor Fabrication by Metal-Induced Lateral Crystallization" by Seok-Woon Lee and Seung-Ki Joo, printed in the IEEE Electron Device Letters, vol. 17, No. 4, Apr. 1996.
Article entitled, "AI Induced Crystallization of a-Si" by G. Radnoczi, A. Robertsson, H.T.G. Hentzell, S.F. Gong and M.-A Hasa, accepted for publ. Jan. 9, 1991 in the J. Appl. 69, pp. 6394-6399.
Article entitle, "Silicide formation and Silicide-mediated Crystallization of Nickel-Implanted Amorphous Silicon Thin Films" by C. Hayzelden and J. L. Batsone, accept for publication Feb. 26, 1993 J. Appl. Phys. 73 (12), Jun. 15, 1993, pp. 8279-8289.
Article entitled, "Pd Induced Lateral Crystallization of Amorphous Si Thin Films", by Seok-Woon Lee, Yoo-Chan Jeon and Seung-Ki Joo, accepted for publication Jan. 4, 1995, Appl. Phys. Lett. 66 (13), Mar. 27, 1995, pp. 1671-1673.

Affiliated with

Also associated with

Rating

Thin-film transistor polycrystalline film formation by nickel in does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin-film transistor polycrystalline film formation by nickel in, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin-film transistor polycrystalline film formation by nickel in will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1836640