Thin film transistor panel and fabricating method thereof

Details Thin film transistor panel and fabricating method thereof Thin film transistor panel and fabricating method thereof

2011-06-28

2011-06-28

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S023000, C438S034000, C438S099000

Reexamination Certificate

active

07968385

ABSTRACT:
A thin film transistor panel includes; an insulating substrate, a gate line including a gate electrode disposed on the insulating substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer, the semiconductor layer including a sidewall, a data line including a source electrode disposed on the semiconductor layer, a drain electrode disposed substantially opposite to and spaced apart from the source electrode, a first protective film disposed on the data line, the first protective film including a sidewall, a second protective film disposed on the first protective film and including a sidewall, and a pixel electrode electrically connected to the drain electrode, wherein the sidewall of the second protective film is disposed inside an area where the sidewall of the first protective film is disposed, and the source electrode and the drain electrode cover the sidewall of the semiconductor layer.

REFERENCES:
patent: 2009/0146147 (2009-06-01), Kim
patent: 2009/0188438 (2009-07-01), Schmucker
patent: 2010/0323482 (2010-12-01), Choi et al.

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