Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-11
2009-12-22
Coleman, W. David (Department: 4116)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S402000, C257SE29299, C257SE21409
Reexamination Certificate
active
07635619
ABSTRACT:
A thin film transistor according to an embodiment of the present invention includes: a semiconductor layer formed on a substrate and having a first diffusion region, a channel region, and a second diffusion region; a gate electrode opposite to the semiconductor layer across a gate insulating film formed on the semiconductor layer; and a connecting conductive film formed on the semiconductor layer opposite to the gate insulating film and extending from the first diffusion region up to a predetermined position in the channel region to electrically connect between the first diffusion region and the channel region. The transistor further includes a laying conductive layer formed on the semiconductor layer opposite to the gate insulating film and electrically connected with the second diffusion region.
REFERENCES:
patent: 2005/0082539 (2005-04-01), Fujimoto et al.
patent: 60-157258 (1985-08-01), None
patent: 9-181317 (1997-07-01), None
patent: 2003-140570 (2003-05-01), None
patent: 2004-327664 (2004-11-01), None
Coleman W. David
Mitsubishi Electric Corporation
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Shook Daniel
LandOfFree
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