Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-07-29
2008-07-29
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S057000
Reexamination Certificate
active
07405425
ABSTRACT:
A thin film transistor includes a gate electrode on a substrate, a gate insulating layer on the substrate, a channel pattern, a source electrode and a drain electrode. The channel pattern includes a semiconductor pattern formed on the gate electrode and overlaying the gate electrode as well as first and second conductive adhesive patterns formed on the semiconductor pattern and spaced apart from each other. The source electrode includes a first barrier pattern, a source pattern and a first capping pattern sequentially formed on the first conductive adhesive pattern. The drain electrode includes a second barrier pattern, a drain pattern and a second capping pattern sequentially formed on the second conductive adhesive pattern. Etched portions of the first and second conductive adhesive patterns have a substantially vertical profile to prevent the exposure of the source and drain electrodes, thereby improving the characteristics of the thin film transistor.
REFERENCES:
patent: 6398974 (2002-06-01), Kim
patent: 2005/0162598 (2005-07-01), Choi et al.
patent: 2005/0242401 (2005-11-01), Cho et al.
patent: 2006/0131580 (2006-06-01), Yang et al.
patent: 2006/0237724 (2006-10-01), Tsao et al.
patent: 2007/0007522 (2007-01-01), Tsao et al.
Chin Hong-Kee
Choe Hee-Hwan
Kim Sang-Gab
Kim Shi-Yul
Oh Min-Seok
MacPherson Kwok & Chen & Heid LLP
Menz Douglas M
Samsung Electronics Co,. Ltd.
LandOfFree
Thin film transistor, method of manufacturing the same,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor, method of manufacturing the same,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor, method of manufacturing the same,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2748434