Thin film transistor, method of fabricating a thin film...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S151000, C438S585000, C438S778000, C257SE21409, C257SE21411

Reexamination Certificate



A thin film transistor (TFT) includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×1014atom/cm3to about 1×1017atom/cm3, a gate electrode on the substrate, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.

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patent: 2009/0072233 (2009-03-01), Hayashi et al.
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patent: 2000-277742 (2000-10-01), None
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patent: 10-2003-0064599 (2003-08-01), None
patent: 10-2004-0014418 (2004-02-01), None
patent: 10-2005-0092505 (2005-09-01), None
patent: 10-2006-0024545 (2006-03-01), None
patent: 10-2007-0035373 (2007-03-01), None
patent: 10-2007-0085828 (2007-08-01), None
patent: WO 00/30183 (2000-05-01), None
patent: WO 02/43125 (2002-05-01), None
Barquinha, P., et al., “Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide”, Journal of Non-Crystalline Solids, 352:1749-1752 (2006).
Liu, Day-Shan, et al., “Microstructure investigations of indium tin oxide films cosputtered with zinc oxide at room temperature”, J. Vac. Sci. Technol. A24(3):694-699 (May/Jun. 2006).
Park, Sang-Hee Ko, et al., Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition:, Electrochemical and Solid-State Letters 9(10):G299-G301 (2006).


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