Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-08-23
2011-08-23
Lee, Cheung (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S585000, C438S778000, C257SE21409, C257SE21411
Reexamination Certificate
active
08003450
ABSTRACT:
A thin film transistor (TFT) includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×1014atom/cm3to about 1×1017atom/cm3, a gate electrode on the substrate, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.
REFERENCES:
patent: 6355561 (2002-03-01), Sandhu et al.
patent: 6727522 (2004-04-01), Kawasaki et al.
patent: 6926572 (2005-08-01), Park et al.
patent: 7208768 (2007-04-01), Ono et al.
patent: 2004/0198029 (2004-10-01), Yasuda et al.
patent: 2005/0017247 (2005-01-01), Koo et al.
patent: 2006/0113539 (2006-06-01), Sano et al.
patent: 2009/0072233 (2009-03-01), Hayashi et al.
patent: 2009/0267064 (2009-10-01), Yano et al.
patent: 2000-277742 (2000-10-01), None
patent: 2003-176109 (2003-06-01), None
patent: 2005-321790 (2005-11-01), None
patent: 10-2001-0089452 (2001-10-01), None
patent: 10-2003-0064599 (2003-08-01), None
patent: 10-2004-0014418 (2004-02-01), None
patent: 10-2005-0092505 (2005-09-01), None
patent: 10-2006-0024545 (2006-03-01), None
patent: 10-2007-0035373 (2007-03-01), None
patent: 10-2007-0085828 (2007-08-01), None
patent: WO 00/30183 (2000-05-01), None
patent: WO 02/43125 (2002-05-01), None
Barquinha, P., et al., “Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide”, Journal of Non-Crystalline Solids, 352:1749-1752 (2006).
Liu, Day-Shan, et al., “Microstructure investigations of indium tin oxide films cosputtered with zinc oxide at room temperature”, J. Vac. Sci. Technol. A24(3):694-699 (May/Jun. 2006).
Park, Sang-Hee Ko, et al., Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition:, Electrochemical and Solid-State Letters 9(10):G299-G301 (2006).
Jeong Jae-Kyeong
Kim Hyung-Jun
Lim Seong-Joon
Mo Yeon-Gon
Shin Hyun-soo
Lee Cheung
Lee & Morse P.C.
Samsung Mobile Display Co., Ltd.
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