Memory devices comprising nano region embedded dielectric...

Details Memory devices comprising nano region embedded dielectric... Memory devices comprising nano region embedded dielectric...

2011-06-21

2011-06-21

Fulk, Steven J (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29309, C438S261000

Reexamination Certificate

active

07964908

ABSTRACT:
In one aspect, a memory cell includes a plurality of dielectric layers located within a charge storage gate structure. At least one of the dielectric layers includes an dielectric material including oxygen, and nano regions including oxygen embedded in the dielectric material, where an oxygen concentration of the dielectric material is the greater than an oxygen concentration of the nano regions. In another aspect, at least one of the dielectric layers includes a dielectric material and nano regions embedded in the dielectric material, where an atomic composition of the dielectric material is the same as the atomic composition of the nano regions, and a density of the dielectric material is the greater than a density of the nano regions.

REFERENCES:
patent: 7378310 (2008-05-01), Wang et al.
patent: 7476927 (2009-01-01), Bhattacharyya
patent: 2005/0045943 (2005-03-01), Lung et al.
patent: 2005/0122775 (2005-06-01), Koyonagi et al.
patent: 2006/0046384 (2006-03-01), Joo et al.
patent: 2006/0110870 (2006-05-01), Bhattacharyya
patent: 2007/0092989 (2007-04-01), Kraus et al.
patent: 2007/0102750 (2007-05-01), Kim et al.
patent: 2007/0232041 (2007-10-01), Choi et al.
patent: 2009/0039417 (2009-02-01), Chen et al.
patent: 2004055969 (2004-02-01), None
patent: 1020050025350 (2005-03-01), None
patent: 1020060108088 (2006-10-01), None
patent: WO 2006088430 (2006-08-01), None

Affiliated with

Also associated with

Rating

Memory devices comprising nano region embedded dielectric... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory devices comprising nano region embedded dielectric..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory devices comprising nano region embedded dielectric... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2697431