Thin film transistor-liquid crystal display and a manufacturing

Details Thin film transistor-liquid crystal display and a manufacturing Thin film transistor-liquid crystal display and a manufacturing

1996-05-17

1999-01-12

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438166, 438486, H01L 2100, H01L 2184, H01L 2120, H01L 2136

Patent

active

058588205

ABSTRACT:
The present invention relates to a thin film transistor-liquid crystal display (hereinafter referred to as a TFT-LCD) and a manufacturing method thereof.
An amorphous silicon is deposited on a substrate. The amorphous silicon is transformed into a poly silicon by method of solid phase crystallization, and the first poly silicon layer pattern is formed by etching. An amorphous silicon is deposited on the first poly silicon layer pattern. The amorphous silicon is transformed into a second poly silicon layer by method of solid phase crystallization.

REFERENCES:
patent: 5318919 (1994-06-01), Noguchi et al.
patent: 5389580 (1995-02-01), Miyasaka
patent: 5508216 (1996-04-01), Inoue
patent: 5531182 (1996-07-01), Yonehara
patent: 5637515 (1997-06-01), Takemura

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