Thin film transistor, its manufacture method and display device

Details Thin film transistor, its manufacture method and display device Thin film transistor, its manufacture method and display device

2007-04-10

2007-04-10

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

Reexamination Certificate

active

10745419

ABSTRACT:
On an insulating substrate, a first insulating buffer layer, a heat accumulating-light shielding layer having at least a silicon layer on the surface thereof, a second insulating buffer layer and a first silicon layer are laminated in the order recited from the bottom. The lamination structure of the heat accumulating-light shielding layer, second buffer layer and first silicon layer is patterned. A laser beam is applied the patterned first silicon layer to melt and crystallize the first silicon layer. A thin film transistor is formed by using the crystallized first silicon layer. A polysilicon thin film transistor of high performance and small leak current to be caused by light as well as a display device using such thin film transistors is provided.

REFERENCES:
patent: 6906347 (2005-06-01), Yamazaki et al.
patent: 6-291034 (1994-10-01), None
patent: 2002-050576 (2002-02-01), None

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