Thin film transistor including low resistance conductive...

Details Thin film transistor including low resistance conductive... Thin film transistor including low resistance conductive...

2007-02-01

2009-08-18

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S352000, C257S353000, C257SE29151, C257SE29117

Reexamination Certificate

active

07576394

ABSTRACT:
A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.

REFERENCES:
patent: 5650358 (1997-07-01), Gu et al.
patent: 6180438 (2001-01-01), Deane et al.
patent: 6285041 (2001-09-01), Noguchi
patent: 2006/0244107 (2006-11-01), Sugihara et al.
patent: 2004-349583 (2004-12-01), None
patent: 2005-33172 (2005-02-01), None

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