Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-01-12
2009-12-08
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S582000, C438S656000, C257S388000, C257S412000
Reexamination Certificate
active
07629205
ABSTRACT:
A thin film transistor (TFT) that can prevent damage to a silicon layer under a gate electrode in an annealing process by using a first gate electrode having high thermal resistance and a second gate electrode having high reflectance and a method of manufacturing the TFT are provided. The method of manufacturing a TFT includes forming a double-layered gate electrode which includes a first gate electrode formed of a material having high thermal resistance and a second gate electrode formed of a metal having high optical reflectance on the first gate electrode, and forming a source and a drain by annealing doped regions on both sides of a silicon layer under the gate electrode by radiating a laser beam onto the entire upper surface of the silicon layer.
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Notice to Submit Response issued by the Japanese Patent Office on Sep. 22, 2006, in corresponding Japanese Patent Application No. 10-2005-0003192; and English translation thereof.
Cho Hans S.
Kwon Jang-yeon
Lim Hyuck
Noguchi Takashi
Buchanan & Ingersoll & Rooney PC
Samsung Electronics Co,. Ltd.
Toledo Fernando L
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