Thin-film transistor for semiconductor memory device and fabrica

Details Thin-film transistor for semiconductor memory device and fabrica Thin-film transistor for semiconductor memory device and fabrica

1992-06-30

1993-12-14

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Semiconductive

437 41, 257 67, 257369, 365188, 365163, H01L 2994

Patent

active

052709680

ABSTRACT:
Disclosed is a TFT for a semiconductor memory device and the fabricating method thereof, comprising a first conductive layer formed on a first insulating layer of a semiconductor substrate and doped with a first conductive type impurity, a second insulating layer formed on the first conductive layer, a contact hole formed in the second insulating layer above the first conductive layer, a semiconductor layer formed on a predetermined portion of the first conductive layer exposed in the contact hole, the inner walls of the contact hole and the second insulating layer, a thin-film gate insulating layer covering the semiconductor layer, a second conductive layer formed on a gate insulating layer to overlap the contact hole and its periphery, a first impurity region formed while upwardly dispersing the impurity of the first conductive layer into the semiconductor layer in contact with the first conductive layer of the contact hole, a second impurity region placed in the semiconductor layer of the second insulating layer, in which the first conductive impurity is doped, and a channel region limited between the first and second impurity regions and provided as a semiconductor layer of the inner side walls of the contact hole.

REFERENCES:
patent: 4820652 (1989-04-01), Hayashi
patent: 5210429 (1993-05-01), Adan

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